H. Morkoç : rechercher sur Z-Library

IEEE Transactions on Electron Devices

Année:

1985

Langue:

english

Fichier:

PDF, 205 KB

english, 1985

Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors

Ketterson, A.A., Masselink, W.T., Gedymin, J.S., Klem, J., Chin-Kun Peng, Kopp, W.F., Morkoc, H., Gleason, K.R.

Journal:

Année:

1986

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1986

Folded acoustic and quantized optic phonons in (GaAl)As superlattices

Colvard, C., Gant, T., Klein, M., Merlin, R., Fischer, R., Morkoc, H., Gossard, A.

Journal:

Drummond, T.J., Masselink, W.T., Morkoc, H.

Année:

1985

Langue:

english

Fichier:

PDF, 623 KB

english, 1985

Modulation-doped GaAs/(Al,Ga)As heterojunction field-effect transistors: MODFETs

Journal:

Proceedings of the IEEE

Année:

1986

Langue:

english

Fichier:

PDF, 8.70 MB

english, 1986

Processing, Structure, Properties, and Applications of PZT Thin Films

Izyumskaya, N., Alivov, Y. -I., Cho, S. -J., Morkoç, H., Lee, H., Kang, Y. -S.

Journal:

Critical Reviews in Solid State and Material Sciences

Année:

2007

Langue:

english

Fichier:

PDF, 3.15 MB

english, 2007

Magnetic-field-enhanced Raman scattering by confined and interface phonons in semiconductor superlattices

Gammon, D., Merlin, R., Morkoc, H.

Journal:

Année:

1987

Langue:

english

Fichier:

PDF, 170 KB

english, 1987

GaAs bipolar transistors grown on (100) Si substrates by molecular beam epitaxy

Fischer, R., Chand, N., Kopp, W., Morkoç, H., Erickson, L. P., Youngman, R.

Journal:

Applied Physics Letters

Année:

1985

Langue:

english

Fichier:

PDF, 449 KB

english, 1985

/GaAs strained-layer multiple quantum wells grown by molecular-beam epitaxy

Ji, G., Agarwala, S., Huang, D., Chyi, J., Morkoç, H.

Journal:

Journal of Crystal Growth

Année:

1988

Langue:

english

Fichier:

PDF, 427 KB

english, 1988

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 1 February 2014)] Gallium Nitride Materials and Devices IX - Boost in deep-UV electroluminescence from tunnel-injection GaN/AlN quantum dot LEDs by polarization-induced doping

Chyi, Jen-Inn, Nanishi, Yasushi, Morkoç, Hadis, Piprek, Joachim, Yoon, Euijoon, Fujioka, Hiroshi, Verma, Jai K., Protasenko, Vladimir V., Islam, S. M., Xing, Huili, Jena, Debdeep

Année:

2014

Langue:

english

Fichier:

PDF, 637 KB

english, 2014

SPIE Proceedings [SPIE OPTO - San Francisco, California (Saturday 23 January 2010)] Gallium Nitride Materials and Devices V - Development of high-power UV LEDs for epoxy curing applications

Liu, W. H., Chyi, Jen-Inn, Nanishi, Yasushi, Chu, C. F., Cheng, C. C., Morkoç, Hadis, Litton, Cole W., Hsu, K. H., Chung, Y. T., Piprek, Joachim, Yoon, Euijoon, Wang, Y. K., Li, C. C., Chu, J. Y., Fan

Année:

2010

Langue:

english

Fichier:

PDF, 1.02 MB

english, 2010

SPIE Proceedings [SPIE SPIE OPTO - San Francisco, California, United States (Saturday 28 January 2017)] Gallium Nitride Materials and Devices XII - Recent progress of high-quality GaN substrates by HVPE method

Chyi, Jen-Inn, Fujioka, Hiroshi, Morkoç, Hadis, Nanishi, Yasushi, Schwarz, Ulrich T., Shim, Jong-In, Fujikura, Hajime, Yoshida, Takehiro, Shibata, Masatomo, Otoki, Yohei

Année:

2017

Langue:

english

Fichier:

PDF, 866 KB

english, 2017

GaAs-based metal-insulator-semiconductor structures with low interface traps using molecular beam epitaxy and chemical vapor deposition

D.G. Park, M. Tao, J. Reed, K. Suzue, A.E. Botchkarev, Z. Fan, G.B. Gao, S.J. Chey, J. Van Nostrand, D.G. Cahill, H. Morkoç

Journal:

Année:

1995

Langue:

english

Fichier:

PDF, 462 KB

english, 1995

The tunneling of electron-hole pairs in a Raman scattering study of a thin layer GaAs/AlAs superlattice

Vladimir V. Gridin, Robert Beserman, H. Morkoc

Journal:

Solid State Communications

Année:

1988

Langue:

english

Fichier:

PDF, 206 KB

english, 1988

Modeling of the I–V characteristics of single and double barrier tunneling diodes using A k · p band model

D. Mui, M. Patil, J. Chen, S. Agarwala, N.S. Kumar, H. Morkoc

Journal:

Solid-State Electronics

Année:

1989

Langue:

english

Fichier:

PDF, 536 KB

english, 1989

Quantum tunneling of electrons through superlattices in metal-semiconductor ohmic contacts

F.Y. Huang, T.C. Shen, H. Morkoç

Journal:

Solid-State Electronics

Année:

1993

Langue:

english

Fichier:

PDF, 329 KB

english, 1993

Properties of silicon-doped AlxGa1-xAs grown by molecular beam epitaxy

R. Fischer, T.J. Drummond, R.E. Thorne, W.G. Lyons, H. Morkoç

Journal:

Année:

1983

Langue:

english

Fichier:

PDF, 394 KB

english, 1983

Photoluminescence of Al0.4Ga0.6As/GaAs quantum well structures prepared by molecular beam epitaxy

Y.L. Sun, R. Fischer, M.V. Klein, H. Morkoç, E.E. Mendez

Journal:

Année:

1984

Langue:

english

Fichier:

PDF, 352 KB

english, 1984

Investigation of Al/(Al,Ga)As/GaAs metal/insulator/ semiconductor-type structures and application to buried interface field effect transistors

T.J. Drummond, D. Arnold, R. Fischer, H. Morkoç

Journal:

Année:

1985

Langue:

english

Fichier:

PDF, 645 KB

english, 1985

Molecular beam epitaxial growth of GaAs and other compound semiconductors

K. Adomi, J.-I. Chyi, S.F. Fang, T.C. Shen, S. Strite, H. Morkoç

Journal:

Année:

1991

Langue:

english

Fichier:

PDF, 3.64 MB

english, 1991

Si/SiGe heterostructures and devices

G.L. Zhou, H. Morkoç

Journal:

Année:

1993

Langue:

english

Fichier:

PDF, 1.73 MB

english, 1993

A review of III–V semiconductor based metal-insulator-semiconductor structures and devices

D.S.L. Mui, Z. Wang, H. Morkoç

Journal:

Année:

1993

Langue:

english

Fichier:

PDF, 1.68 MB

english, 1993

Progress and prospects for GaN and the III–V nitride semiconductors

S. Strite, M.E. Lin, H. Morkoç

Journal:

Microelectronics Reliability

Année:

1993

Langue:

english

Fichier:

PDF, 1.42 MB

english, 1993

TEM combined with AlxGa1−xAs As marker layers as a technique for the study of GaAs MBE growth

J.H. Mazur, J. Washburn, R. Fischer, T. Henderson, J. Klem, W.T. Masselink, W. Kopp, H. Morkoc

Journal:

Ultramicroscopy

Année:

1985

Langue:

english

Fichier:

PDF, 1.02 MB

english, 1985

n-Al0.15Ga0.85 N/p-6H–SiC heterostructure and based bipolar transistor

Ya.I. Alivov, Q. Fan, X. Ni, S. Chevtchenko, I.B. Bhat, H. Morkoç

Journal:

Année:

2010

Langue:

english

Fichier:

PDF, 277 KB

english, 2010

Manifestation of edge dislocations in photoluminescence of GaN

M.A. Reshchikov, D. Huang, L. He, H. Morkoç, J. Jasinski, Z. Liliental-Weber, S.S. Park, K.Y. Lee

Journal:

Année:

2005

Langue:

english

Fichier:

PDF, 351 KB

english, 2005

Unstable luminescence in GaN and ZnO

M.A. Reshchikov, Y.T. Moon, X. Gu, B. Nemeth, J. Nause, H. Morkoç

Journal:

Année:

2006

Langue:

english

Fichier:

PDF, 234 KB

english, 2006

Luminescence properties of defects in ZnO

M.A. Reshchikov, H. Morkoç, B. Nemeth, J. Nause, J. Xie, B. Hertog, A. Osinsky

Journal:

Année:

2007

Langue:

english

Fichier:

PDF, 171 KB

english, 2007

Photoluminescence from structural defects in GaN

M.A Reshchikov, J Jasinski, Z Liliental-Weber, D Huang, L He, P Visconti, H Morkoç

Journal:

physica status solidi (a)

Année:

2003

Langue:

english

Fichier:

PDF, 261 KB

english, 2003

InAlN-barrier HFETs with GaN and InGaN channels

J. Liberis, I. Matulionienė, A. Matulionis, E. Šermukšnis, J. Xie, J. H. Leach, H. Morkoç

Journal:

Année:

2009

Langue:

english

Fichier:

PDF, 951 KB

english, 2009

Stress test measurements of lattice-matched InAlN/AlN/GaN HFET structures

Jacob H. Leach, Mo Wu, Xianfeng Ni, Xing Li, Ümit Özgür, Hadis Morkoç, Juozas Liberis, Emilis Šermukšnis, Arvydas Matulionis, Hailing Cheng, Çagliyan Kurdak, Yong-Tae Moon

Journal:

physica status solidi (a)

Année:

2010

Langue:

english

Fichier:

PDF, 184 KB

english, 2010

Ferromagnetism of ZnO and GaN: A Review

C. Liu, F. Yun, H. Morkoç

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2005

Langue:

english

Fichier:

PDF, 3.61 MB

english, 2005

Structural perfection of laterally overgrown GaN layers grown in polar- and non-polar directions

Zuzanna Liliental-Weber, X. Ni, H. Morkoc

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 311 KB

english, 2008

High-κ dielectrics and advanced channel concepts for Si MOSFET

Mo Wu, Y. I. Alivov, Hadis Morkoç

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2008

Langue:

english

Fichier:

PDF, 1.52 MB

english, 2008

Microwave ferrites, part 2: passive components and electrical tuning

Ümit Özgür, Yahya Alivov, Hadis Morkoç

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 1.75 MB

english, 2009

Microwave ferrites, part 1: fundamental properties

Ümit Özgür, Yahya Alivov, Hadis Morkoç

Journal:

Journal of Materials Science: Materials in Electronics

Année:

2009

Langue:

english

Fichier:

PDF, 1.60 MB

english, 2009

Contact potential of p-Al0.5Ga0.5As/n-GaAs structures

H. Morkoç, S.G. Bandy, G.A. Antypas

Journal:

Solid-State Electronics

Année:

1978

Langue:

english

Fichier:

PDF, 153 KB

english, 1978

Growth by liquid phase epitaxy and evaluation of submicron InxGa1−xAsyP1−y layers for microwave field effect transistors

Y.M. Houng, H. Morkoç

Journal:

Année:

1980

Langue:

english

Fichier:

PDF, 291 KB

english, 1980

Properties of Au/W/GaAs Schottky barriers

H. Morkoç, A.Y. Cho, C.M. Stanchak, T.J. Drummond

Journal: